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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFB100N50P Datasheet PDF
IXFB100N50P
$ 1.267
IXFB100N50P Datasheet PDF (6 Pages)
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IXFB100N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Channels
1 Channel
Power Dissipation
1890 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
500 V
Rise Time
29 ns
Input Capacitance (Ciss)
20000pF @25V(Vds)
Input Power (Max)
1250 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1890W (Tc)

IXFB100N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.31 mm

IXFB100N50P Documents

IXYS Semiconductor
6 Pages / 0.15 MByte
IXYS Semiconductor
11 Pages / 0.17 MByte

IXFB100N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 100A 3Pin ISOPLUS 264
IXYS Semiconductor
PLUS N-CH 500V 100A
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