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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFB210N30P3 Datasheet PDF
IXFB210N30P3
$ 25.595
IXFB210N30P3 Datasheet PDF (5 Pages)
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IXFB210N30P3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0145 Ω
Polarity
N-Channel
Power Dissipation
1.89 kW
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
300 V
Rise Time
25 ns
Input Capacitance (Ciss)
16200pF @25V(Vds)
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1890W (Tc)

IXFB210N30P3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
20.29 mm
Size-Width
5.31 mm
Size-Height
26.59 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFB210N30P3 Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXFB210N30 Documents

IXYS Semiconductor
MOSFET Transistor, N Channel, 210A, 300V, 0.0145Ω, 10V, 5V
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