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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFB52N90P Datasheet PDF
IXFB52N90P
$ 23.83
IXFB52N90P Datasheet PDF (5 Pages)
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IXFB52N90P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
160 mΩ
Polarity
N-Channel
Power Dissipation
1.25 kW
Threshold Voltage
3.5 V
Drain to Source Voltage (Vds)
900 V
Breakdown Voltage (Drain to Source)
900 V
Continuous Drain Current (Ids)
52A
Rise Time
80 ns
Input Capacitance (Ciss)
19000pF @25V(Vds)
Input Power (Max)
1250 W
Fall Time
42 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250W (Tc)

IXFB52N90P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
20.29 mm
Size-Width
5.31 mm
Size-Height
26.59 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFB52N90P Documents

IXYS Semiconductor
5 Pages / 0.11 MByte
IXYS Semiconductor
16 Pages / 0.13 MByte

IXFB52N90 Documents

IXYS Semiconductor
PLUS N-CH 900V 52A
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