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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFB60N80P Datasheet PDF
IXFB60N80P
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IXFB60N80P Datasheet PDF (4 Pages)
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IXFB60N80P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
140 mΩ
Power Dissipation
1.25 kW
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Rise Time
29 ns
Input Capacitance (Ciss)
18000pF @25V(Vds)
Input Power (Max)
1250 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250W (Tc)

IXFB60N80P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
20.29 mm
Size-Width
5.31 mm
Size-Height
26.59 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFB60N80P Documents

IXYS Semiconductor
4 Pages / 0.16 MByte

IXFB60N80 Documents

IXYS Semiconductor
Trans MOSFET N-CH 800V 60A 3Pin(3+Tab) PLUS 264
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