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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFB70N60Q2 Datasheet PDF
IXFB70N60Q2
$ 1.227
IXFB70N60Q2 Datasheet PDF (4 Pages)
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IXFB70N60Q2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
80 mΩ
Power Dissipation
890 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
25 ns
Input Capacitance (Ciss)
7200pF @25V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
890W (Tc)

IXFB70N60Q2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
20.29 mm
Size-Width
5.31 mm
Size-Height
26.59 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFB70N60Q2 Documents

IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFB70N60 Documents

IXYS Semiconductor
Trans MOSFET N-CH 600V 70A 3Pin(3+Tab) PLUS 264
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