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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFH12N100 Datasheet PDF
IXFH12N100
$ 10.522
IXFH12N100 Datasheet PDF (4 Pages)
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IXFH12N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.00 kV
Current Rating
12.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.05 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
1 kV
Continuous Drain Current (Ids)
12.0 A
Rise Time
33 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH12N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH12N100 Documents

IXYS Semiconductor
4 Pages / 0.55 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

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