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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFH12N100F Datasheet PDF
IXFH12N100F
$ 7.608
IXFH12N100F Datasheet PDF (2 Pages)
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IXFH12N100F Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.05 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
1 kV
Rise Time
9.8 ns
Input Capacitance (Ciss)
2700pF @25V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH12N100F Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH12N100F Documents

IXYS Semiconductor
2 Pages / 0.1 MByte

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