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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH15N100Q3 Datasheet PDF
IXFH15N100Q3
$ 13.527
IXFH15N100Q3 Datasheet PDF (5 Pages)
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IXFH15N100Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Polarity
N-CH
Power Dissipation
690 W
Input Capacitance
3250 pF
Drain to Source Voltage (Vds)
1000 V
Continuous Drain Current (Ids)
15A
Rise Time
10 ns
Input Capacitance (Ciss)
3250pF @25V(Vds)
Input Power (Max)
690 W
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
690W (Tc)

IXFH15N100Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
16.26 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH15N100Q3 Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFH15N100 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH15N100 Power MOSFET, N Channel, 15A, 1kV, 700mohm, 10V, 4.5V
IXYS Semiconductor
TO-247 N-CH 1000V 15A
IXYS Semiconductor
TO-247 N-CH 1000V 15A
IXYS Semiconductor
TO-247AD N-CH 1000V 15A
Littelfuse
Power Field-Effect Transistor,
IXYS Semiconductor
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