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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH26N50 Datasheet PDF
IXFH26N50
$ 8.588
IXFH26N50 Datasheet PDF (4 Pages)
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IXFH26N50 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
26.0 A
Case/Package
TO-247-3
Power Rating
300 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
26.0 A
Rise Time
33 ns
Input Capacitance (Ciss)
4200pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH26N50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃

IXFH26N50 Documents

IXYS Semiconductor
4 Pages / 0.15 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXFH26 Documents

IXYS Semiconductor
TO-247 N-CH 600V 26A
IXYS Semiconductor
TO-247AD N-CH 500V 26A
IXYS Semiconductor
Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 600V 26A
IXYS Semiconductor
TO-247 N-CH 500V 26A
IXYS Semiconductor
TO-247AD N-CH 500V 26A
IXYS Semiconductor
Trans MOSFET N-CH 550V 26A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 600V 26A
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