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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH26N50P Datasheet PDF
IXFH26N50P
$ 5.069
IXFH26N50P Datasheet PDF (5 Pages)
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IXFH26N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
26.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
230 mΩ
Polarity
N-Channel
Power Dissipation
400 W
Input Capacitance
3.60 nF
Gate Charge
60.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
26.0 A
Rise Time
25 ns
Input Capacitance (Ciss)
3600pF @25V(Vds)
Input Power (Max)
400 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
400W (Tc)

IXFH26N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH26N50P Documents

IXYS Semiconductor
5 Pages / 0.31 MByte

IXFH26N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 500V 26A
IXYS Semiconductor
TO-247 N-CH 500V 26A
IXYS Semiconductor
TO-247AD N-CH 500V 26A
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