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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH30N50P Datasheet PDF
IXFH30N50P
$ 1.507
IXFH30N50P Datasheet PDF (6 Pages)
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IXFH30N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
30.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
460 W
Threshold Voltage
5 V
Input Capacitance
4.15 nF
Gate Charge
70.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
24 ns
Reverse recovery time
200 ns
Input Capacitance (Ciss)
4150pF @25V(Vds)
Input Power (Max)
460 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
460W (Tc)

IXFH30N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH30N50P Documents

IXYS Semiconductor
6 Pages / 0.3 MByte
IXYS Semiconductor
8 Pages / 0.18 MByte

IXFH30N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 500V 30A
IXYS Semiconductor
Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
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