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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH36N60P Datasheet PDF
IXFH36N60P
$ 8.415
IXFH36N60P Datasheet PDF (4 Pages)
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IXFH36N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
36.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.19 Ω
Polarity
N-Channel
Power Dissipation
650 W
Threshold Voltage
5 V
Input Capacitance
5.80 nF
Gate Charge
102 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
36.0 A
Rise Time
25 ns
Reverse recovery time
200 ns
Input Capacitance (Ciss)
5800pF @25V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
650W (Tc)

IXFH36N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH36N60P Documents

IXYS Semiconductor
4 Pages / 0.26 MByte
IXYS Semiconductor
4 Pages / 0.26 MByte

IXFH36N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH36N60P Power MOSFET, N Channel, 36A, 600V, 190mohm, 10V, 5V
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