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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH52N30Q Datasheet PDF
IXFH52N30Q
$ 0.408
IXFH52N30Q Datasheet PDF (2 Pages)
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IXFH52N30Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
300 V
Current Rating
52.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.06 Ω
Polarity
N-Channel
Power Dissipation
360 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
52.0 A
Rise Time
60 ns
Input Capacitance (Ciss)
5300pF @25V(Vds)
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
360W (Tc)

IXFH52N30Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Weight
6 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH52N30Q Documents

IXYS Semiconductor
2 Pages / 0.07 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXFH52N30 Documents

IXYS Semiconductor
Trans MOSFET N-CH 300V 52A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Single N-Channel 300V 400W 110NC Through Hole Power Mosfet - TO-247
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