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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH58N20 Datasheet PDF
IXFH58N20
$ 2.17
IXFH58N20 Datasheet PDF (4 Pages)
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IXFH58N20 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
58.0 A
Case/Package
TO-247-3
Power Rating
300 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.04 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
58.0 A
Rise Time
15 ns
Input Capacitance (Ciss)
4400pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH58N20 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH58N20 Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXFH58 Documents

IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXYS Semiconductor
Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
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