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IXFH58N20Q
$ 5.5
IXFH58N20Q Datasheet PDF (2 Pages)
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IXFH58N20Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
58.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
40.0 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
58.0 A
Rise Time
40 ns
Input Capacitance (Ciss)
3600pF @25V(Vds)
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH58N20Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH58N20Q Documents

IXYS Semiconductor
2 Pages / 0.34 MByte
IXYS Semiconductor
2 Pages / 0.34 MByte

IXFH58N20 Documents

IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXYS Semiconductor
Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
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