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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH80N65X2 Datasheet PDF
IXFH80N65X2
$ 10.4
IXFH80N65X2 Datasheet PDF (5 Pages)
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IXFH80N65X2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.038 Ω
Polarity
N-Channel
Power Dissipation
890 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Continuous Drain Current (Ids)
80A
Rise Time
42 ns
Input Capacitance (Ciss)
8300pF @25V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
890W (Tc)

IXFH80N65X2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
21.34 mm
Size-Height
5.21 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH80N65X2 Documents

IXYS Semiconductor
5 Pages / 0.19 MByte
IXYS Semiconductor
3 Pages / 0.25 MByte
IXYS Semiconductor
5 Pages / 0.2 MByte

IXFH80N65 Documents

IXYS Semiconductor
TO-247 N-CH 650V 80A
Littelfuse
Power Field-Effect Transistor,
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