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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFK64N60P Datasheet PDF
IXFK64N60P
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IXFK64N60P Datasheet PDF (5 Pages)
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IXFK64N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
64.0 A
Case/Package
TO-264-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.096 Ω
Polarity
N-Channel
Power Dissipation
1.04 kW
Threshold Voltage
5 V
Input Capacitance
1.15 nF
Gate Charge
200 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
64.0 A
Rise Time
23 ns
Input Capacitance (Ciss)
12000pF @25V(Vds)
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1040W (Tc)

IXFK64N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFK64N60P Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXFK64N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFK64N60P Power MOSFET, PolarFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
IXYS Semiconductor
TO-264 N-CH 600V 64A
IXYS Semiconductor
Mosfet n-Ch 600V 64A To-264
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