IXFN120N20 Datasheet PDF - IXYS Semiconductor

●The IXFN120N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.

● Encapsulating epoxy meets UL94V-0 flammability

● miniBLOC with aluminium nitride isolation

● Rugged polysilicon gate cell structure

● Unclamped Inductive Switching (UIS) rated

● Low inductance

● High power density

● Easy to mount

● Space-saving s