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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN132N50P3 Datasheet PDF
IXFN132N50P3
$ 38.621
IXFN132N50P3 Datasheet PDF (6 Pages)
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IXFN132N50P3 Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.039 Ω
Polarity
N-Channel
Power Dissipation
1.5 kW
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Rise Time
9 ns
Input Capacitance (Ciss)
18600pF @25V(Vds)
Input Power (Max)
1500 W
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1500W (Tc)

IXFN132N50P3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN132N50P3 Documents

IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.11 MByte

IXFN132N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 112A 4Pin SOT-227B
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