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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN180N25T Datasheet PDF
IXFN180N25T
$ 18.984
IXFN180N25T Datasheet PDF (6 Pages)
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IXFN180N25T Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
12.9 mΩ
Power Dissipation
900 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Rise Time
33 ns
Input Capacitance (Ciss)
28000pF @25V(Vds)
Input Power (Max)
900 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
900W (Tc)

IXFN180N25T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
12.22 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN180N25T Documents

IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.15 MByte

IXFN180N25 Documents

IXYS Semiconductor
Trans MOSFET N-CH 250V 164A Automotive 4Pin SOT-227B
Littelfuse
Power Field-Effect Transistor,
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