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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN200N07 Datasheet PDF
IXFN200N07
$ 7.994
IXFN200N07 Datasheet PDF (3 Pages)
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IXFN200N07 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
70.0 V
Current Rating
200 A
Case/Package
SOT-227-4
Power Rating
520 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.006 Ω
Polarity
N-Channel
Power Dissipation
520 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
70 V
Breakdown Voltage (Drain to Source)
70 V
Continuous Drain Current (Ids)
200 A
Rise Time
60 ns
Isolation Voltage
2.50 kV
Input Capacitance (Ciss)
9000pF @25V(Vds)
Input Power (Max)
520 W
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
520W (Tc)

IXFN200N07 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Weight
44.0 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN200N07 Documents

IXYS Semiconductor
3 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN200 Documents

IXYS Semiconductor
Trans MOSFET N-CH 100V 200A 4Pin SOT-227B
IXYS Semiconductor
SOT-227B N-CH 70V 180A
Littelfuse
Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B
IXYS Semiconductor
N-CH 70V 180A
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