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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN24N100 Datasheet PDF
IXFN24N100
$ 43.619
IXFN24N100 Datasheet PDF (4 Pages)
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IXFN24N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
3 Pin
Voltage Rating (DC)
1.00 kV
Current Rating
24.0 A
Case/Package
SOT-227-4
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.39 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
5.5 V
Drain to Source Voltage (Vds)
1 kV
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
24.0 A
Rise Time
35 ns
Isolation Voltage
2.50 kV
Input Capacitance (Ciss)
8700pF @25V(Vds)
Input Power (Max)
568 W
Fall Time
21 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
568000 mW

IXFN24N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Weight
40.0 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN24N100 Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
6 Pages / 0.12 MByte

IXFN24 Documents

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IXYS SEMICONDUCTOR IXFN24N100 Power MOSFET, N Channel, 24A, 1kV, 390mohm, 10V, 5.5V
IXYS Semiconductor
SOT-227B N-CH 150V 240A
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Trans MOSFET N-CH 1kV 24A 4Pin SOT-227B
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