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Part Datasheet Search > Transistors > IXYS Semiconductor > IXFN24N100F Datasheet PDF
IXFN24N100F
$ 38.605
IXFN24N100F Datasheet PDF (2 Pages)
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IXFN24N100F Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
390 mΩ
Polarity
N-Channel
Power Dissipation
600 W
Drain to Source Voltage (Vds)
1 kV
Breakdown Voltage (Drain to Source)
1000 V
Rise Time
18 ns
Input Capacitance (Ciss)
6600pF @25V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
600W (Tc)

IXFN24N100F Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN24N100F Documents

IXYS Semiconductor
2 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.38 MByte

IXFN24N100 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN24N100 Power MOSFET, N Channel, 24A, 1kV, 390mohm, 10V, 5.5V
IXYS Semiconductor
Trans MOSFET N-CH 1kV 24A 4Pin SOT-227B
IXYS Semiconductor
HiPerFET Power MOSFET
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