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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN27N80 Datasheet PDF
IXFN27N80
$ 30.377
IXFN27N80 Datasheet PDF (4 Pages)
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IXFN27N80 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
800 V
Current Rating
27.0 A
Case/Package
SOT-227-4
Power Rating
520 W
Drain to Source Resistance (on) (Rds)
300 mΩ
Polarity
N-Channel
Power Dissipation
520 W
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
27.0 A
Rise Time
80.0 ns
Input Capacitance (Ciss)
9740pF @25V(Vds)
Input Power (Max)
520 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
520W (Tc)

IXFN27N80 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN27N80 Documents

IXYS Semiconductor
4 Pages / 0.15 MByte

IXFN27 Documents

IXYS Semiconductor
SOT-227B N-CH 800V 27A
IXYS Semiconductor
SOT-227B N-CH 800V 27A
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