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IXFN32N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

High Voltage MOS

Case Package:

SOT-227-4

Description:

IXYS SEMICONDUCTOR IXFN32N120 Power MOSFET, N Channel, 32A, 1.2kV, 350mohm, 10V, 5V

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Documentation:

IXFN32N120 Datasheet (4 Pages)

IXFN32N120 Datasheet PDF (4 Pages)

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IXFN32N120 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

3 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.35 Ω

Polarity

N-Channel

Power Dissipation

780 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

1.2 kV

Breakdown Voltage (Drain to Source)

1200 V

Continuous Drain Current (Ids)

32.0 A

Rise Time

42 ns

Input Capacitance (Ciss)

15900pF @25V(Vds)

Fall Time

22 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

Power Dissipation (Max)

780000 mW

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IXFN32N120 Size & Package

TYPE

DESCRIPTION

Packaging

Box

Material

Silicon

Size-Length

38.23 mm

Size-Width

25.42 mm

Size-Height

9.6 mm

Weight

0.000036 kg

Operating Temperature

-55℃ ~ 150℃

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IXFN32N120 Environmental

IXFN32N120 Function Overview

IXFN32N120 Documents

IXFN32N120 Datasheet

IXYS Semiconductor

4 Pages / 0.56 MByte

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4 Pages / 0.55 MByte

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