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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN32N80P Datasheet PDF
IXFN32N80P
$ 25.493
IXFN32N80P Datasheet PDF (4 Pages)
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IXFN32N80P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
270 mΩ
Polarity
N-CH
Power Dissipation
625 W
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
29A
Rise Time
29 ns
Input Capacitance (Ciss)
8820pF @25V(Vds)
Input Power (Max)
625 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
625W (Tc)

IXFN32N80P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN32N80P Documents

IXYS Semiconductor
4 Pages / 0.09 MByte

IXFN32N80 Documents

IXYS Semiconductor
SOT-227B N-CH 800V 29A
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