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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN38N100P Datasheet PDF
IXFN38N100P
$ 2.446
IXFN38N100P Datasheet PDF (5 Pages)
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IXFN38N100P Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
210 mΩ
Polarity
N-CH
Power Dissipation
1 kW
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
38A
Rise Time
55 ns
Input Capacitance (Ciss)
24000pF @25V(Vds)
Input Power (Max)
1000 W
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000W (Tc)

IXFN38N100P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN38N100P Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.11 MByte

IXFN38N100 Documents

IXYS Semiconductor
SOT-227B N-CH 1000V 38A
IXYS Semiconductor
SOT-227B N-CH 1000V 38A
IXYS Semiconductor
HiPerFET Power MOSFET
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