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IXFN44N60 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

High Voltage MOS

Case Package:

SOT-227-4

Description:

IXYS SEMICONDUCTOR IXFN44N60 Power MOSFET, N Channel, 44A, 600V, 130mohm, 10V, 4.5V

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Documentation:

IXFN44N60 Datasheet (4 Pages)

IXFN44N60 Datasheet PDF (4 Pages)

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IXFN44N60 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

3 Pin

Case/Package

SOT-227-4

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.13 Ω

Polarity

N-Channel

Power Dissipation

600 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

44.0 A

Rise Time

55 ns

Isolation Voltage

2.50 kV

Input Capacitance (Ciss)

8900pF @25V(Vds)

Fall Time

45 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600W (Tc)

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IXFN44N60 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Weight

46.0 g

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN44N60 Environmental

IXFN44N60 Function Overview

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IXFN44N60 Datasheet

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4 Pages / 0.13 MByte

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