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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN50N50 Datasheet PDF
IXFN50N50
$ 25.721
IXFN50N50 Datasheet PDF (4 Pages)
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IXFN50N50 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Polarity
N-CH
Power Dissipation
600 W
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
50A
Input Capacitance (Ciss)
9400pF @25V(Vds)
Power Dissipation (Max)
600W (Tc)

IXFN50N50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
25.42 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN50N50 Documents

IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.14 MByte

IXFN50 Documents

IXYS Semiconductor
SOT-227B N-CH 800V 50A
IXYS Semiconductor
SOT-227B N-CH 500V 50A
IXYS Semiconductor
Single transistor; SOT227B; 35A; Ugs: ±20V; screw; screw; Uds: 1.2kV
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