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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN50N80Q2 Datasheet PDF
IXFN50N80Q2
$ 1.516
IXFN50N80Q2 Datasheet PDF (4 Pages)
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IXFN50N80Q2 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Rating
1135 W
Polarity
N-CH
Power Dissipation
1135 W
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
50A
Rise Time
25 ns
Input Capacitance (Ciss)
13500pF @25V(Vds)
Input Power (Max)
890 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1135W (Tc)

IXFN50N80Q2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN50N80Q2 Documents

IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.11 MByte

IXFN50N80 Documents

IXYS Semiconductor
SOT-227B N-CH 800V 50A
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