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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN55N50 Datasheet PDF
IXFN55N50
$ 23.012
IXFN55N50 Datasheet PDF (4 Pages)
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IXFN55N50 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
3 Pin
Case/Package
SOT-227-4
Power Rating
600 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.08 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
55.0 A
Rise Time
60 ns
Isolation Voltage
2.50 kV
Input Capacitance (Ciss)
9400pF @25V(Vds)
Input Power (Max)
625 W
Fall Time
45 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625W (Tc)

IXFN55N50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Weight
46.0 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN55N50 Documents

IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN55 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 55A 4Pin SOT-227B
IXYS Semiconductor
SOT-227B N-CH 500V 55A
Littelfuse
Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B
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