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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFN60N60 Datasheet PDF
IXFN60N60
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IXFN60N60 Datasheet PDF (2 Pages)
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IXFN60N60 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
60.0 A
Case/Package
SOT-227-4
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
52 ns
Isolation Voltage
2.5 kV
Input Capacitance (Ciss)
15000pF @25V(Vds)
Input Power (Max)
700 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
700W (Tc)

IXFN60N60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Width
25.42 mm
Weight
0.04 kg
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN60N60 Documents

IXYS Semiconductor
2 Pages / 0.06 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN60 Documents

IXYS Semiconductor
Power MOSFET, N Channel, 60A, 800V, 140mohm, 10V, 5V
IXYS Semiconductor
Power MOSFET, N Channel, 60A, 600V, 75mohm, 10V, 4.5V
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