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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFN60N80P Datasheet PDF
IXFN60N80P
$ 42.336
IXFN60N80P Datasheet PDF (4 Pages)
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IXFN60N80P Specifications

TYPE
DESCRIPTION
Mounting Style
Panel
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
140 mΩ
Polarity
N-Channel
Power Dissipation
1.04 kW
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
29 ns
Input Capacitance (Ciss)
18000pF @25V(Vds)
Input Power (Max)
1040 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1040W (Tc)

IXFN60N80P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN60N80P Documents

IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN60N80 Documents

IXYS Semiconductor
Power MOSFET, N Channel, 60A, 800V, 140mohm, 10V, 5V
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