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IXFN80N50 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 500V 80A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IXFN80N50 Datasheet (4 Pages)

IXFN80N50 Datasheet PDF (4 Pages)

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IXFN80N50 Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

4 Pin

Voltage Rating (DC)

500 V

Current Rating

80.0 A

Case/Package

SOT-227-4

Number of Channels

1 Channel

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.055 Ω

Polarity

N-Channel

Power Dissipation

780 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

500 V

Breakdown Voltage (Drain to Source)

500 V

Continuous Drain Current (Ids)

80.0 A

Rise Time

70 ns

Input Capacitance (Ciss)

9890pF @25V(Vds)

Input Power (Max)

780 W

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

Power Dissipation (Max)

700W (Tc)

View Datasheet >

IXFN80N50 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Material

Silicon

Size-Length

38.23 mm

Size-Width

25.42 mm

Size-Height

9.6 mm

Weight

0.000036 kg

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IXFN80N50 Environmental

IXFN80N50 Function Overview

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IXFN80N50 Datasheet

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4 Pages / 0.55 MByte

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Littelfuse

Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN

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