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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN80N50Q2 Datasheet PDF
IXFN80N50Q2
$ 35.811
IXFN80N50Q2 Datasheet PDF (4 Pages)
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IXFN80N50Q2 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
890 W
Drain to Source Voltage (Vds)
500 V
Input Capacitance (Ciss)
12800pF @25V(Vds)
Power Dissipation (Max)
890W (Tc)

IXFN80N50Q2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN80N50Q2 Documents

IXYS Semiconductor
4 Pages / 0.55 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXFN80N50 Documents

IXYS Semiconductor
SOT-227B N-CH 500V 80A
IXYS Semiconductor
SOT-227B N-CH 500V 63A
IXYS Semiconductor
Trans MOSFET N-CH 500V 66A 4Pin SOT-227B
IXYS Semiconductor
Trans MOSFET N-CH 500V 80A 4Pin SOT-227B
Littelfuse
Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN
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