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IXFN80N50Q3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 500V 63A

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Documentation:

IXFN80N50Q3 Datasheet (5 Pages)

IXFN80N50Q3 Datasheet PDF (5 Pages)

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IXFN80N50Q3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-227-4

Drain to Source Resistance (on) (Rds)

0.065 Ω

Polarity

N-Channel

Power Dissipation

780 W

Threshold Voltage

6.5 V

Drain to Source Voltage (Vds)

500 V

Continuous Drain Current (Ids)

63A

Input Capacitance (Ciss)

10000pF @25V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

780W (Tc)

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IXFN80N50Q3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

38.23 mm

Size-Width

25.07 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN80N50Q3 Environmental

IXFN80N50Q3 Function Overview

IXFN80N50Q3 Documents

IXFN80N50Q3 Datasheet

IXYS Semiconductor

5 Pages / 0.12 MByte

IXFN80N50Q3 Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.22 MByte

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IXFN80N50Q2 Datasheet PDF

Littelfuse

Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN

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