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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFP10N60P Datasheet PDF
IXFP10N60P
$ 0.691
IXFP10N60P Datasheet PDF (4 Pages)
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IXFP10N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.74 Ω
Polarity
N-Channel
Power Dissipation
200 W
Threshold Voltage
5.5 V
Input Capacitance
1.61 nF
Gate Charge
32.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
27 ns
Reverse recovery time
200 ns
Input Capacitance (Ciss)
1610pF @25V(Vds)
Input Power (Max)
200 W
Fall Time
21 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IXFP10N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFP10N60P Documents

IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXFP10N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFP10N60P Power MOSFET, N Channel, 10A, 600V, 740mohm, 10V, 5.5V
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