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IXFR80N50P
$ 11
IXFR80N50P Datasheet PDF (5 Pages)
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IXFR80N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
80.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
0.072 Ω
Polarity
N-Channel
Power Dissipation
360 W
Threshold Voltage
5 V
Input Capacitance
12.7 pF
Gate Charge
197 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
45.0 A
Rise Time
27 ns
Isolation Voltage
2.50 kV
Input Capacitance (Ciss)
12700pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360W (Tc)

IXFR80N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFR80N50P Documents

IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXFR80N50 Documents

IXYS Semiconductor
ISOPLUS N-CH 500V 50A
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFR80N50P MOSFET Transistor, N Channel, 45A, 500V, 72mohm, 10V, 5V
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