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IXFT12N100Q Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

TO-268 N-CH 1000V 12A

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IXFT12N100Q Datasheet PDF (4 Pages)

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IXFT12N100Q Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Polarity

N-CH

Power Dissipation

300W (Tc)

Drain to Source Voltage (Vds)

1000 V

Continuous Drain Current (Ids)

12A

Rise Time

23 ns

Input Capacitance (Ciss)

2900pF @25V(Vds)

Input Power (Max)

300 W

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

300W (Tc)

IXFT12N100Q Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXFT12N100Q Environmental

IXFT12N100Q Function Overview

IXFT12N100Q Documents

IXFT12N100Q Other Datasheet PDF

IXYS Semiconductor

4 Pages / 0.14 MByte

IXFT12N100 Documents

IXFT12N100 Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 12A

IXFT12N100Q Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 12A

IXFT12N100F Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 12A

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