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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFT16N120P Datasheet PDF
IXFT16N120P
$ 17.013
IXFT16N120P Datasheet PDF (4 Pages)
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IXFT16N120P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
950 mΩ
Power Dissipation
660 W
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
1200 V
Breakdown Voltage (Drain to Source)
1200 V
Rise Time
28 ns
Input Capacitance (Ciss)
6900pF @25V(Vds)
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
660W (Tc)

IXFT16N120P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.05 mm
Size-Width
14 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFT16N120P Documents

IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFT16N120 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1.2kV 16A 3Pin(2+Tab) TO-268
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