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IXFT20N100P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-2

Description:

TO-268 N-CH 1000V 20A

Pictures:

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Product Pictures

Documentation:

IXFT20N100P Datasheet (4 Pages)

IXFT20N100P Datasheet PDF (4 Pages)

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IXFT20N100P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-2

Number of Channels

1 Channel

Polarity

N-CH

Power Dissipation

660 W

Threshold Voltage

6.5 V

Drain to Source Voltage (Vds)

1000 V

Continuous Drain Current (Ids)

20A

Rise Time

37 ns

Input Capacitance (Ciss)

7300pF @25V(Vds)

Fall Time

45 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

660W (Tc)

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IXFT20N100P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Width

14 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFT20N100P Environmental

IXFT20N100P Function Overview

IXFT20N100P Documents

IXFT20N100P Datasheet

IXYS Semiconductor

4 Pages / 0.11 MByte

IXFT20N100P Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.11 MByte

IXFT20N100 Documents

IXFT20N100P Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 20A

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