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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX32N100Q3 Datasheet PDF
IXFX32N100Q3
$ 22.594
IXFX32N100Q3 Datasheet PDF (5 Pages)
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IXFX32N100Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.32 Ω
Polarity
N-Channel
Power Dissipation
1.25 kW
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
1 kV
Continuous Drain Current (Ids)
32A
Rise Time
15 ns
Input Capacitance (Ciss)
10990pF @25V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250W (Tc)

IXFX32N100Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX32N100Q3 Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFX32N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 32A 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
PLUS N-CH 1000V 32A
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