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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX90N30 Datasheet PDF
IXFX90N30
$ 95.061
IXFX90N30 Datasheet PDF (5 Pages)
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IXFX90N30 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
300 V
Current Rating
90.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
33 mΩ
Polarity
N-CH
Power Dissipation
560 W
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
90.0 A
Rise Time
55 ns
Input Capacitance (Ciss)
10000pF @25V(Vds)
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
560W (Tc)

IXFX90N30 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX90N30 Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.12 MByte

IXFX90 Documents

IXYS Semiconductor
PLUS N-CH 300V 90A
IXYS Semiconductor
Trans MOSFET N-CH 200V 90A 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
Mosfet n-Ch 600V 90A Plus247
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