$ 13.908

IXGF32N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

i4-Pac

Description:

IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44A, 3.5V, 200W, 1.7kV, ISOPLUS i4-PAC, 3Pins

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Documentation:

IXGF32N170 Datasheet (5 Pages)

IXGF32N170 Datasheet PDF (5 Pages)

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IXGF32N170 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

i4-Pac

Number of Positions

3 Position

Polarity

N-Channel

Power Dissipation

200 W

Breakdown Voltage (Collector to Emitter)

1700 V

Input Power (Max)

200 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

200000 mW

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IXGF32N170 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGF32N170 Environmental

IXGF32N170 Function Overview

IXGF32N170 Documents

IXGF32N170 Datasheet

IXYS Semiconductor

5 Pages / 0.17 MByte

IXGF32N170 Other Datasheet PDF

IXYS Semiconductor

8 Pages / 0.13 MByte

IXGF32 Documents

IXGF32N170 Datasheet PDF

IXYS Semiconductor

IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44A, 3.5V, 200W, 1.7kV, ISOPLUS i4-PAC, 3Pins

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