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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH12N60CD1 Datasheet PDF
IXGH12N60CD1
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IXGH12N60CD1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
100 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
35 ns
Input Power (Max)
100 W
Power Dissipation (Max)
100 W

IXGH12N60CD1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH12N60CD1 Documents

IXYS Semiconductor
2 Pages / 0.06 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGH12N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-247AD
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