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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH24N60C Datasheet PDF
IXGH24N60C
$ 6.914

IXGH24N60C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
48.0 A
Case/Package
TO-247-3
Power Dissipation
150000 mW
Rise Time
25.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
150 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150000 mW

IXGH24N60C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH24N60C Documents

IXYS Semiconductor
2 Pages / 0.05 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGH24N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TRANS IGBT CHIP N-CH 600V 48A 3Pin(3+TAB) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 56A 190W TO247
IXYS Semiconductor
IGBT 600V 56A 190W TO247
IXYS Semiconductor
HiPerFAST IGBT with Diode
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