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IXGH35N120C Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

IGBT 1200V 70A 300W TO247AD

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IXGH35N120C Datasheet (2 Pages)

IXGH35N120C Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-247-3

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

300 W

Power Dissipation (Max)

300 W

View Datasheet >

IXGH35N120C Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IXGH35N120C Environmental

IXGH35N120C Function Overview

IXGH35N120C Documents

IXGH35N120C Datasheet

IXYS Semiconductor

2 Pages / 0.05 MByte

IXGH35N120C Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.05 MByte

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IXGH35N120B Datasheet PDF

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Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD

IXGH35N120C Datasheet PDF

IXYS Semiconductor

IGBT 1200V 70A 300W TO247AD

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