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IXGH40N120B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247

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Documentation:

IXGH40N120B2D1 Datasheet (7 Pages)

Package Outline Dimension on2 Page 4 Page 6 Page

IXGH40N120B2D1 Datasheet PDF (7 Pages)

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IXGH40N120B2D1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Positions

3 Position

Power Dissipation

380 W

Breakdown Voltage (Collector to Emitter)

1200 V

Reverse recovery time

100 ns

Input Power (Max)

380 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

380000 mW

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IXGH40N120B2D1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

16.26 mm

Size-Width

5.3 mm

Size-Height

21.46 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGH40N120B2D1 Environmental

IXGH40N120B2D1 Function Overview

IXGH40N120B2D1 Documents

IXGH40N120B2D1 Datasheet

IXYS Semiconductor

7 Pages / 0.21 MByte

IXGH40N120B2 Documents

IXGH40N120B2D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247

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