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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH40N60A Datasheet PDF
IXGH40N60A
$ 2.176
IXGH40N60A Datasheet PDF (4 Pages)
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IXGH40N60A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
250000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

IXGH40N60A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH40N60A Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXGH40N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1.2kV 75A 3Pin(3+Tab) TO-247AD
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