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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGN200N60B3 Datasheet PDF
IXGN200N60B3
$ 36.552
IXGN200N60B3 Datasheet PDF (4 Pages)
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IXGN200N60B3 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Rating
830 W
Number of Positions
4 Position
Power Dissipation
830 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
26nF @25V
Input Power (Max)
830 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830000 mW

IXGN200N60B3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGN200N60B3 Documents

IXYS Semiconductor
4 Pages / 0.82 MByte
IXYS Semiconductor
7 Pages / 0.18 MByte

IXGN200N60 Documents

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Trans IGBT Chip N-CH 600V 200A 700000mW 4Pin SOT-227B
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 200A 600000mW 4Pin SOT-227B
IXYS Semiconductor
IGBT 300A 600V SOT-227B
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